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Infineon Technologies SIDC09D60F6X1SA2

Part No.:
SIDC09D60F6X1SA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
Die
Description:
DIODE GP 600V 30A WAFER
Quantity:

Unit Price:$0

Ext Price:$0

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SIDC09D60F6X1SA2 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 30 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Sawn on foil
Operating Temperature - Junction:
-40°C ~ 175°C
Image SIDC09D60F6X1SA2
Part Number SIDC09D60F6X1SA2
Manufacturer Infineon Technologies
Series -
Package/Case Die
Packaging Bulk
Product Status Obsolete
Technology Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 30A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 27 µA @ 600 V
Capacitance @ Vr, F -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Sawn on foil
Operating Temperature - Junction -40°C ~ 175°C
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