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| Image | ![]() |
| Part Number | SDT10S60 |
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| Package/Case | TO-220-2 |
| Packaging | Tube |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 350 µA @ 600 V |
| Capacitance @ Vr, F | 350pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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