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Taiwan Semiconductor Corporation TSM280NB06LCR RLG

Part No.:
TSM280NB06LCR RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
8-PowerLDFN
Description:
MOSFET N-CH 60V 7A/28A 8PDFN
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Unit Price:$0

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TSM280NB06LCR RLG Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
969 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 56W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (5.2x5.75)
Image TSM280NB06LCR RLG
Part Number TSM280NB06LCR RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerLDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 969 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5.2x5.75)
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