Infineon Technologies BSZ180P03NS3EGATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

9A (Ta), 39.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

3.1V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:

30 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

2220 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2.1W (Ta), 40W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TSDSON-8