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STMicroelectronics STL6N2VH5

Part No.:
STL6N2VH5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
6-PowerWDFN
Description:
MOSFET N-CH 20V POWERFLAT
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STL6N2VH5 Information

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Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ V
Package/Case:
6-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 16 V
FET Feature:
-
Power Dissipation (Max):
2.4W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (2x2)
Image STL6N2VH5
Part Number STL6N2VH5
Manufacturer STMicroelectronics
Series STripFET™ V
Package/Case 6-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 16 V
FET Feature -
Power Dissipation (Max) 2.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (2x2)
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