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Taiwan Semiconductor Corporation TSM060N03CP ROG

Part No.:
TSM060N03CP ROG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Description:
MOSFET N-CHANNEL 30V 70A TO252
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TSM060N03CP ROG Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.1 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
54W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)
Image TSM060N03CP ROG
Part Number TSM060N03CP ROG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V
FET Feature -
Power Dissipation (Max) 54W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252 (DPAK)
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