Toshiba Semiconductor and Storage TPN22006NH,LQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVIII-H

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

6.5V, 10V

Rds On (Max) @ Id, Vgs:

22mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

12 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

710 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

700mW (Ta), 18W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSON Advance (3.3x3.3)