Transphorm TP65H300G4LSGB-TR

Product attributes

Attribute value

Manufacturer:

Transphorm

Series:

SuperGaN®

Package/Case:

8-VDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V

Rds On (Max) @ Id, Vgs:

312mOhm @ 6.5A, 6V

Vgs(th) (Max) @ Id:

2.8V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

8.8 nC @ 10 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

730 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

21W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PQFN (8x8)