Transphorm TP65H100G4LSGB-TR

Product attributes

Attribute value

Manufacturer:

Transphorm

Series:

SuperGaN®

Package/Case:

8-VDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

18.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

110mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

4.1V @ 1.8mA

Gate Charge (Qg) (Max) @ Vgs:

14.4 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

818 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

65.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PQFN (8x8)