Transphorm TP65H070LDG

Product attributes

Attribute value

Manufacturer:

Transphorm

Series:

TP65H070L

Package/Case:

3-PowerDFN

Packaging:

Tube

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

GaNFET (Cascode Gallium Nitride FET)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

85mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

4.8V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:

9.3 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

600 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

96W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

3-PQFN (8x8)