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Microchip Technology TN5335N8-G

Part No.:
TN5335N8-G
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-243AA
Description:
MOSFET N-CH 350V 230MA TO243AA
Quantity:

Unit Price:$0

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TN5335N8-G Information

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Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
350 V
Current - Continuous Drain (Id) @ 25°C:
230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):
3V, 10V
Rds On (Max) @ Id, Vgs:
15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
110 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-243AA (SOT-89)
Image TN5335N8-G
Part Number TN5335N8-G
Manufacturer Microchip Technology
Series -
Package/Case TO-243AA
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V
Current - Continuous Drain (Id) @ 25°C 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-243AA (SOT-89)
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