Microchip Technology TN0110N3-G-P002

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

TO-226-3, TO-92-3 (TO-226AA)

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

60 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3