Toshiba Semiconductor and Storage SSM10N954L,EFF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

10-SMD, No Lead

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

2.75mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 1.11mA

Gate Charge (Qg) (Max) @ Vgs:

25 nC @ 4 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

800mW (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TCSPAC-153001