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Vishay Siliconix SQJA70EP-T1_BE3

Part No.:
SQJA70EP-T1_BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SO-8
Description:
N-CHANNEL 100-V (D-S) 175C MOSFE
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SQJA70EP-T1_BE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
14.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
220 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
27W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Image SQJA70EP-T1_GE3 SQJA70EP-T1_BE3
Part Number SQJA70EP-T1_GE3 SQJA70EP-T1_BE3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® TrenchFET®
Package/Case PowerPAK® SO-8 PowerPAK® SO-8
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14.7A (Tc) 14.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4A, 10V 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 27W (Tc) 27W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerPAK® SO-8 PowerPAK® SO-8
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