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Vishay Siliconix SQ2337CES-T1_GE3

Part No.:
SQ2337CES-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET P-CH 80V 2.2A SOT23-3
Quantity:

Unit Price:$0

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SQ2337CES-T1_GE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 40 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
620 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Image SQ2337CES-T1_GE3
Part Number SQ2337CES-T1_GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 40 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
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