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Vishay Siliconix SIJA74DP-T1-GE3

Part No.:
SIJA74DP-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SO-8
Description:
MOSFET N-CH 40V 24A/81.2A PPAK
Quantity:

Unit Price:$0

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SIJA74DP-T1-GE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 81.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.99mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
4.1W (Ta), 46.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Image SIJA74DP-T1-GE3
Part Number SIJA74DP-T1-GE3
Manufacturer Vishay Siliconix
Series -
Package/Case PowerPAK® SO-8
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 81.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 3.99mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 20 V
FET Feature -
Power Dissipation (Max) 4.1W (Ta), 46.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
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