Vishay Siliconix SI8416DB-T2-E1

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

6-UFBGA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

8 V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.2V, 4.5V

Rds On (Max) @ Id, Vgs:

23mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

26 nC @ 4.5 V

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

1470 pF @ 4 V

FET Feature:

-

Power Dissipation (Max):

2.77W (Ta), 13W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-Micro Foot™ (1.5x1)