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Vishay Siliconix SI3459BDV-T1-BE3

Part No.:
SI3459BDV-T1-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
P-CHANNEL 60-V (D-S) MOSFET
Quantity:

Unit Price:$0

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SI3459BDV-T1-BE3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta), 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Image SI3459BDV-T1-E3 SI3459BDV-T1-BE3
Part Number SI3459BDV-T1-E3 SI3459BDV-T1-BE3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® -
Package/Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Last Time Buy Last Time Buy
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc) 2.2A (Ta), 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 216mOhm @ 2.2A, 10V 216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V 350 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.3W (Tc) 2W (Ta), 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
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