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Rohm Semiconductor RW4C045BCTCL1

Part No.:
RW4C045BCTCL1
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
6-PowerUFDFN
Description:
PCH -20V -4.5A POWER MOSFET: RW4
Quantity:

Unit Price:$0

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RW4C045BCTCL1 Information

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Attribute value
Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
6-PowerUFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
56mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
6.5 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
460 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1616-7T
Image RW4C045BCTCL1
Part Number RW4C045BCTCL1
Manufacturer Rohm Semiconductor
Series -
Package/Case 6-PowerUFDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 56mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DFN1616-7T
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