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Rohm Semiconductor RV5A040APTCR1

Part No.:
RV5A040APTCR1
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
6-PowerWFDFN
Description:
MOSFET P-CH 12V 4A DFN1616-6
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Unit Price:$0

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RV5A040APTCR1 Information

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Attribute value
Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
6-PowerWFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 4.5 V
Vgs (Max):
-8V, 0V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 6 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1616-8S
Image RV5A040APTCR1
Part Number RV5A040APTCR1
Manufacturer Rohm Semiconductor
Series -
Package/Case 6-PowerWFDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) -8V, 0V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 6 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DFN1616-8S
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