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Rohm Semiconductor RUR040N02HZGTL

Part No.:
RUR040N02HZGTL
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
SC-96
Description:
MOSFET N-CH 20V 4A TSMT3
Quantity:

Unit Price:$0

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RUR040N02HZGTL Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SC-96
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT3
Image RUR040N02HZGTL
Part Number RUR040N02HZGTL
Manufacturer Rohm Semiconductor
Series -
Package/Case SC-96
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSMT3
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