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Rohm Semiconductor RF6C055BCTCR

Part No.:
RF6C055BCTCR
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
6-SMD, Flat Leads
Description:
MOSFET P-CHANNEL 20V 5.5A TUMT6
Quantity:

Unit Price:$0

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RF6C055BCTCR Information

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Attribute value
Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
6-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Rds On (Max) @ Id, Vgs:
25.8mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
15.2 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1080 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TUMT6
Image RF6C055BCTCR
Part Number RF6C055BCTCR
Manufacturer Rohm Semiconductor
Series -
Package/Case 6-SMD, Flat Leads
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 25.8mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15.2 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TUMT6
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