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Rohm Semiconductor QS5U28TR

Part No.:
QS5U28TR
Manufacturer:
Rohm Semiconductor
Category:
FETs, MOSFETs
Package:
SOT-23-5 Thin, TSOT-23-5
Description:
MOSFET P-CH 20V 2A TSMT5
Quantity:

Unit Price:$0

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QS5U28TR Information

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Manufacturer:
Rohm Semiconductor
Series:
-
Package/Case:
SOT-23-5 Thin, TSOT-23-5
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
125mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
4.8 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 10 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
1.25W (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT5
Image QS5U28TR
Part Number QS5U28TR
Manufacturer Rohm Semiconductor
Series -
Package/Case SOT-23-5 Thin, TSOT-23-5
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 125mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT5
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