Quest Semi QS1200SCM36

Product attributes

Attribute value

Manufacturer:

Quest Semi

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

36A

Drive Voltage (Max Rds On, Min Rds On):

2.8V

Rds On (Max) @ Id, Vgs:

100mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

3.8V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

60 nC @ 600 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1001 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

198W

Operating Temperature:

-55°C ~ 175°C

Grade:

Automotive

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO247-3