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Nexperia USA Inc. PXP8R3-20QXJ

Part No.:
PXP8R3-20QXJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Description:
PXP8R3-20QX/SOT8002/MLPAK33
Quantity:

Unit Price:$0

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PXP8R3-20QXJ Information

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Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
12.4A (Ta), 65.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 12.3A, 4.5V
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
91.8 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
6200 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
MLPAK33
Image PXP8R3-20QXJ
Part Number PXP8R3-20QXJ
Manufacturer Nexperia USA Inc.
Series -
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 65.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 12.3A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91.8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package MLPAK33
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