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Nexperia USA Inc. PSMN6R0-25YLDX

Part No.:
PSMN6R0-25YLDX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Description:
MOSFET N-CH 25V 61A LFPAK56
Quantity:

Unit Price:$0

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PSMN6R0-25YLDX Information

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Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 12 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Image PSMN6R0-30YLDX PSMN6R0-30YL,115 PSMN6R0-30YLB,115 PSMN6R0-25YLDX PSMN6R0-30YLD/2X
Part Number PSMN6R0-30YLDX PSMN6R0-30YL,115 PSMN6R0-30YLB,115 PSMN6R0-25YLDX PSMN6R0-30YLD/2X
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Series - - - - -
Package/Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Not For New Designs Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 79A (Tc) 71A (Tc) 61A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V 6mOhm @ 15A, 10V 6.5mOhm @ 20A, 10V 6.75mOhm @ 15A, 10V 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.15V @ 1mA 1.95V @ 1mA 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10 V 24 nC @ 10 V 19 nC @ 10 V 10.5 nC @ 10 V 13.7 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 832 pF @ 15 V 1425 pF @ 12 V 1088 pF @ 15 V 705 pF @ 12 V 832 pF @ 15 V
FET Feature - - - Schottky Diode (Body) -
Power Dissipation (Max) 47W (Tc) 55W (Tc) 58W (Tc) 43W (Tc) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
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