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Nexperia USA Inc. PSMN5R0-40MLHX

Part No.:
PSMN5R0-40MLHX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1210, 8-LFPAK33 (5-Lead)
Description:
MOSFET N-CH 40V 85A LFPAK33
Quantity:

Unit Price:$0

Ext Price:$0

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PSMN5R0-40MLHX Information

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Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2649 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33
Image PSMN5R0-30YL,115 PSMN5R0-40MLHX PSMN5R0-40MSHX PSMN5R0-80BS,118 PSMN5R0-100ES,127
Part Number PSMN5R0-30YL,115 PSMN5R0-40MLHX PSMN5R0-40MSHX PSMN5R0-80BS,118 PSMN5R0-100ES,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Series - TrenchMOS™ TrenchMOS™ - -
Package/Case SC-100, SOT-669 SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead) TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Product Status Not For New Designs Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 40 V 80 V 100 V
Current - Continuous Drain (Id) @ 25°C 91A (Tc) 85A (Tc) 85A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 15A, 10V 5mOhm @ 20A, 10V 5mOhm @ 20A, 10V 5.1mOhm @ 25A, 10V 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 3.6V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 39 nC @ 10 V 29 nC @ 10 V 101 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1760 pF @ 12 V 2649 pF @ 20 V 2010 pF @ 20 V 6793 pF @ 40 V 9900 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 61W (Tc) 83W (Tc) 83W (Tc) 270W (Tc) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package LFPAK56, Power-SO8 LFPAK33 LFPAK33 D2PAK I2PAK
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