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Nexperia USA Inc. PSMN038-100K,518

Part No.:
PSMN038-100K,518
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET N-CH 100V 8SO
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PSMN038-100K,518 Information

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Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
38mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1740 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image PSMN038-100YLX PSMN038-100K,518
Part Number PSMN038-100YLX PSMN038-100K,518
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Series - TrenchMOS™
Package/Case SC-100, SOT-669 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 6.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 37.5mOhm @ 5A, 10V 38mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39.2 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1905 pF @ 25 V 1740 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 94.9W (Tc) 3.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 8-SO
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