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Panjit International Inc. PJQ4441P_R2_00001

Part No.:
PJQ4441P_R2_00001
Manufacturer:
Panjit International Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Description:
40V P-CHANNEL ENHANCEMENT MODE M
Quantity:

Unit Price:$0

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PJQ4441P_R2_00001 Information

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Attribute value
Manufacturer:
Panjit International Inc.
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2030 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 59.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN3333-8
Image PJQ4441P_R2_00001
Part Number PJQ4441P_R2_00001
Manufacturer Panjit International Inc.
Series -
Package/Case 8-PowerVDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 59.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DFN3333-8
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