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Panjit International Inc. PJP45N06A_T0_00001

Part No.:
PJP45N06A_T0_00001
Manufacturer:
Panjit International Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Description:
60V N-CHANNEL ENHANCEMENT MODE M
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PJP45N06A_T0_00001 Information

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Product attributes
Attribute value
Manufacturer:
Panjit International Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2256 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Image PJP45N06A_T0_00001
Part Number PJP45N06A_T0_00001
Manufacturer Panjit International Inc.
Series -
Package/Case TO-220-3
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2256 pF @ 25 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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