PN Junction Semiconductor P3M173K0T3

Product attributes

Attribute value

Manufacturer:

PN Junction Semiconductor

Series:

P3M

Package/Case:

TO-220-2

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

4A

Drive Voltage (Max Rds On, Min Rds On):

15V

Rds On (Max) @ Id, Vgs:

2.6Ohm @ 600mA, 15V

Vgs(th) (Max) @ Id:

2.2V @ 600µA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+19V, -8V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

75W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-2L