PN Junction Semiconductor P3M12080K4

Product attributes

Attribute value

Manufacturer:

PN Junction Semiconductor

Series:

P3M

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

47A

Drive Voltage (Max Rds On, Min Rds On):

15V

Rds On (Max) @ Id, Vgs:

96mOhm @ 20A, 15V

Vgs(th) (Max) @ Id:

2.4V @ 5mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+21V, -8V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

221W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L