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onsemi NVXK2KR80WDT

Part No.:
NVXK2KR80WDT
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
32-PowerDIP Module (1.311", 33.30mm)
Description:
ELITESIC POWER MODULE FOR OBC, 8
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Unit Price:$0

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NVXK2KR80WDT Information

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Attribute value
Manufacturer:
onsemi
Series:
APM32
Package/Case:
32-PowerDIP Module (1.311", 33.30mm)
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
116mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
1154 pF @ 800 V
FET Feature:
-
Power Dissipation (Max):
82W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
APM32
Image NVXK2KR80WDT
Part Number NVXK2KR80WDT
Manufacturer onsemi
Series APM32
Package/Case 32-PowerDIP Module (1.311", 33.30mm)
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 116mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
FET Feature -
Power Dissipation (Max) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package APM32
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