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onsemi NVTYS009N08HLTWG

Part No.:
NVTYS009N08HLTWG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
SOT-1205, 8-LFPAK56
Description:
MOSFET POWER, SINGLE, N-CHANNEL,
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NVTYS009N08HLTWG Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-1205, 8-LFPAK56
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1402 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3.2W (Ta), 73W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-LFPAK
Image NVTYS009N08HLTWG
Part Number NVTYS009N08HLTWG
Manufacturer onsemi
Series -
Package/Case SOT-1205, 8-LFPAK56
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1402 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 73W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK
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