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onsemi NVNJWS200N031LTAG

Part No.:
NVNJWS200N031LTAG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
3-XFDFN
Description:
MOSFET - POWER, N-CHANNEL WITH E
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NVNJWS200N031LTAG Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
3-XFDFN
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta), 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
3V, 4.5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
89 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta), 4.1W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
3-XDFNW (1x1)
Image NVNJWS200N031LTAG
Part Number NVNJWS200N031LTAG
Manufacturer onsemi
Series -
Package/Case 3-XFDFN
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 4.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 89 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 4.1W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 3-XDFNW (1x1)
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