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onsemi NVMFS4C05NWFET1G

Part No.:
NVMFS4C05NWFET1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerTDFN, 5 Leads
Description:
SINGLE N-CHANNEL LOGIC LEVEL POW
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NVMFS4C05NWFET1G Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerTDFN, 5 Leads
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
27.2A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1972 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3.61W (Ta), 79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
5-DFNW (4.9x5.9) (8-SOFL-WF)
Image NVMFS4C05NWFET1G
Part Number NVMFS4C05NWFET1G
Manufacturer onsemi
Series -
Package/Case 8-PowerTDFN, 5 Leads
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 27.2A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1972 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.61W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
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