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onsemi NVMFS003N10MCT1G

Part No.:
NVMFS003N10MCT1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerTDFN, 5 Leads
Description:
MOSFET - POWER, SINGLE, N-CHANNE
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Unit Price:$0

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NVMFS003N10MCT1G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerTDFN, 5 Leads
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
23.7A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 351µA
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4650 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 194W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Image NVMFS003N10MCT1G
Part Number NVMFS003N10MCT1G
Manufacturer onsemi
Series -
Package/Case 8-PowerTDFN, 5 Leads
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 351µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4650 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 194W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
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