onsemi NVH4L200N170M1

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-247-4

Packaging:

Bulk

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

290mOhm @ 8.5A, 20V

Vgs(th) (Max) @ Id:

4.3V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:

31 nC @ 20 V

Vgs (Max):

+25V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

596 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

107W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L