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onsemi NVD3055L170T4G

Part No.:
NVD3055L170T4G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Description:
MOSFET N-CH 60V 9A DPAK
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Unit Price:$0

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NVD3055L170T4G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
275 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta), 28.5W (Tj)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Image NVD3055L170T4G-VF01 NVD3055L170T4G
Part Number NVD3055L170T4G-VF01 NVD3055L170T4G
Manufacturer onsemi onsemi
Series - -
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V 170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 10 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 25 V 275 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 28.5W (Ta) 1.5W (Ta), 28.5W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
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