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onsemi NVCR4LS1D6N10MCA

Part No.:
NVCR4LS1D6N10MCA
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
Die
Description:
POWER MOSFET, N-CHANNEL, 100 V,
Quantity:

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NVCR4LS1D6N10MCA Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
265A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 698µA
Gate Charge (Qg) (Max) @ Vgs:
115 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9200 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
303W (Tj)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Image NVCR4LS1D6N10MCA
Part Number NVCR4LS1D6N10MCA
Manufacturer onsemi
Series -
Package/Case Die
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 265A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 698µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 50 V
FET Feature -
Power Dissipation (Max) 303W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package Die
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