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onsemi NVBG190N65S3F

Part No.:
NVBG190N65S3F
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Description:
SINGLE N-CHANNEL POWER MOSFET SU
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NVBG190N65S3F Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1710 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
162W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7
Image NVBG190N65S3F
Part Number NVBG190N65S3F
Manufacturer onsemi
Series -
Package/Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 400 V
FET Feature -
Power Dissipation (Max) 162W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
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