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onsemi NTTFS6H854NLTAG

Part No.:
NTTFS6H854NLTAG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Description:
MOSFET N-CH 80V 10A/41A 8WDFN
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Unit Price:$0

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NTTFS6H854NLTAG Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
902 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3.2W (Ta), 54W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Image NTTFS6H854NLTAG
Part Number NTTFS6H854NLTAG
Manufacturer onsemi
Series -
Package/Case 8-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 902 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3)
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