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onsemi NTTFS004P02P8

Part No.:
NTTFS004P02P8
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Description:
POWER MOSFET, SINGLE, P-CHANNEL,
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NTTFS004P02P8 Information

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Attribute value
Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
8-PowerWDFN
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
4mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
13200 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2.3W (Ta), 40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (3.3x3.3)
Image NTTFS004P02P8
Part Number NTTFS004P02P8
Manufacturer onsemi
Series PowerTrench®
Package/Case 8-PowerWDFN
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3)
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