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onsemi NTMYS1D3N04CTWG

Part No.:
NTMYS1D3N04CTWG
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
SOT-1023, 4-LFPAK
Description:
POWER MOSFET, SINGLE N-CHANNEL,
Quantity:

Unit Price:$0

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NTMYS1D3N04CTWG Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-1023, 4-LFPAK
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
43A (Ta), 252A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:
74 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4855 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.9W (Ta), 134W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK4 (5x6)
Image NTMYS1D3N04CTWG
Part Number NTMYS1D3N04CTWG
Manufacturer onsemi
Series -
Package/Case SOT-1023, 4-LFPAK
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 43A (Ta), 252A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4855 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.9W (Ta), 134W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
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