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onsemi NTMFS5C612NWFT1G

Part No.:
NTMFS5C612NWFT1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerTDFN, 5 Leads
Description:
SINGLE N-CHANNEL POWER MOSFET 60
Quantity:

Unit Price:$0

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NTMFS5C612NWFT1G Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerTDFN, 5 Leads
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 238A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4860 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 170W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
5-DFNW (4.9x5.9) (8-SOFL-WF)
Image NTMFS5C612NWFT1G
Part Number NTMFS5C612NWFT1G
Manufacturer onsemi
Series -
Package/Case 8-PowerTDFN, 5 Leads
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 238A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
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