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onsemi NTH4LN041N60S5H

Part No.:
NTH4LN041N60S5H
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-247-4
Description:
MOSFETPOWER, SINGLE, N-CHANNEL,
Quantity:

Unit Price:$0

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NTH4LN041N60S5H Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-247-4
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
41mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id:
4.3V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
6213 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
329W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4
Image NTH4LN041N60S5H
Part Number NTH4LN041N60S5H
Manufacturer onsemi
Series -
Package/Case TO-247-4
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id 4.3V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6213 pF @ 400 V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
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