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onsemi NTGS3A033PZT1G

Part No.:
NTGS3A033PZT1G
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
P-CHANNEL POWER MOSFET -20V, -5.
Quantity:

Unit Price:$0

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NTGS3A033PZT1G Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
33mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18.8 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1870 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
650mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Image NTGS3A033PZT1G
Part Number NTGS3A033PZT1G
Manufacturer onsemi
Series -
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.8 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 10 V
FET Feature -
Power Dissipation (Max) 650mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
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