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onsemi NTBL023N065M3S

Part No.:
NTBL023N065M3S
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Description:
SILICON CARBIDE (SIC) MOSFET ELI
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Unit Price:$0

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NTBL023N065M3S Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
8-PowerSFN
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Rds On (Max) @ Id, Vgs:
32.6mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
69 nC @ 18 V
Vgs (Max):
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds:
1950 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
312W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-HPSOF
Image NTBL023N065M3S
Part Number NTBL023N065M3S
Manufacturer onsemi
Series -
Package/Case 8-PowerSFN
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 32.6mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HPSOF
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