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onsemi NCS025M3E120NT066-09

Part No.:
NCS025M3E120NT066-09
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
-
Description:
ELITESIC 1200V M3E BARE DIE SILI
Quantity:

Unit Price:$0

Ext Price:$0

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NCS025M3E120NT066-09 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
-
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
150A
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
-
Supplier Device Package:
-
Image NCS025M3E120NT066-09
Part Number NCS025M3E120NT066-09
Manufacturer onsemi
Series -
Package/Case -
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 150A
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type -
Supplier Device Package -
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