NovuSem NC1M120C75RRNG

Product attributes

Attribute value

Manufacturer:

NovuSem

Series:

NC1M

Package/Case:

TO-263-8, DPak (7 Leads + Tab)

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

75mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:

2.3V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

1402 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

240W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7L